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Round Tower Type LED lamp BL-L189
o Features:
O O O O O O
1.8 mm Round Tower Type LED Lamps.. Ultra brightness. Choice of various viewing angles. Full color Display application. IC compatible /Low current capability. RoHs Compliance
o Electrical-optical characteristics: (Ta=25ae (Test Condition: IF=20mA) )
Chip Part Number Emitted Color Material P (n m) Lens Type Forward Voltage(VF) Unit:V Luminous Intensity (Iv) Unit:mcd
Viewi ng Angle 2?1/2( deg)
Typ BL-L189SRC BL-L189LRC BL-L189URC BL-L189UEC BL-L189UYC BL-L189UGC BL-L189PGC BL-L189BGC BL-L189BC BL-L189UBC BL-L189VC BL-L189UWC Hi Red Super Red Ultra Red Ultra Orange Ultra Yellow Ultra Green Ultra Pure Green Ultra Bluish Green Blue Ultra Blue UV Ultra White AlGaAs,SH AlGaAs,DH AlGaAs,DDH AlGaInP AlGaInP AlGaInP InGaN InGaN InGaN InGaN InGaN InGaN 660 660 660 630 590 574 525 505 430 470 405 / Water Clear 1.85 1.85 1.95 2.10 2.10 2.20 3.80 3.80 3.80 2.70 3.80 2.70
Max 2.20 2.20 2.20 2.50 2.50 2.50 4.50 4.50 4.50 4.20 4.50 4.20
Min. 50 200 500 120 150 50 400 400 400 400 100 400
Typ. 200 500 700 700 600 800 1200 1000 800 1200 150 2500
50
o Absolute maximum ratings (Ta=25ae ) Parameter Forward Current I F Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature T OPR Storage Temperature T STG Lead Soldering Temperature TSOL SR
25 60 5 150
LR
25 60 5 150
UR
25 60 5 150
UE
30 65 5 150
UY
30 65 5 150
UG
30 75 5 150
PG
30 110 5 150
BG
30 110 5 100
B
30 120 5 100
UB
30 120 5 100
UV
30 120 5 100
W
30 120 5 100
mA mW V mA
U ni t
-40 to +80 -40 to +85
ae ae
Max.260A for 3 sec Max. 5ae (1.6mm from the base of the epoxy bulb)
ae
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Round Tower Type LED lamp BL-L189
o Package configuration & Internal circuit diagram
Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is A 0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice.
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Round Tower Type LED lamp BL-L189
o
1.0
Typical electrical-optical characteristics curves:
(A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10)
0.5
0 350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH(|E ) p
(1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green
50 FORWARD CURRENT(mA)
REL ATIVE LUMIN OU S IN TENSITY 3 2 1 0.5 0.2 0.1 -30 -20 -10
1
8 64 5
23
4.0 1 3.0 FORWARD CURRENT(mA)
50 40 30 20 10 0
RELATIVE LUMINOUS INTENSITY
40 30 20 10 0 1.2
1 6 2,4,8,A 3 5
2.0
5 B
1.0 0 20 40 60 80 100
1.6
2.0
2.4
2.6
3.0
20
40
60
80
100
FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE
FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT
AMBIENT TEMPERATURE Ta(ae ) FORWARD CURRENT VS. AMBIENT TEMPERATURE
1 5 4 2 3
3KHz 300KHz 1KHz 100KHz F-REFRESH RATE 10 10KHz 9 8 7 6 5 Ipeak M AX. IDC MAX. 4 3 2 0 10 20 30 40 50 60 70 1 AMBIENT TEMPERATURE Ta(ae ) 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) 10,000 Ipeak MAX. IDC MAX.
30KHz 3KHz 300Hz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 4 3 2 1 1 10 100 1000 tp-PULSE DURATION uS (5)
10,000
NOTE:25ae free air temperature unless otherwise specified
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